Switch Mode/High Frequency Gate Drive Transformers
High Frequency Magnetics
Triad gate drive transformers are used universally in all high frequency switching topologies to isolate the control circuitry from the line-connected switches. The windings are interleaved for the lowest possible practical leakage inductance. Turn ratios of 1:1 and 1:1.5 optimize coupling and enhance performance. Available with single or dual secondaries, these transformers constructed of UL rated 130 ºC materials are easily standardized at operating frequencies 200 kHz and beyond.
Item # |
Max. DCR 1-2 |
Max. DCR Gate |
Min. ET Product |
Max. Leakage |
Min. Inductance |
Overall Turns Ratio |
|---|---|---|---|---|---|---|
| GDE25-1 GDE25-1/Asset/a1325.jpg | Max. DCR 1-2 N/A 0.350 Ω | Max. DCR Gate N/A 0.350 Ω | Min. ET Product N/A 540 VµSEC | Max. Leakage N/A 2.5 µH | Min. Inductance N/A 0.680 mH | Overall Turns Ratio N/A 1:1 |
| GDE25-2 GDE25-2/Asset/a1325.jpg | Max. DCR 1-2 N/A 0.350 Ω | Max. DCR Gate N/A 0.650 Ω | Min. ET Product N/A 540 VµSEC | Max. Leakage N/A 2.5 µH | Min. Inductance N/A 0.680 mH | Overall Turns Ratio N/A 1:1:1 |
| GDE25-3 GDE25-3/Asset/a1325.jpg | Max. DCR 1-2 N/A 0.875 Ω | Max. DCR Gate N/A 0.350 Ω | Min. ET Product N/A 840 VµSEC | Max. Leakage N/A 3.5 µH | Min. Inductance N/A 1.50 mH | Overall Turns Ratio N/A 1.5:1 |
| GDE25-4 GDE25-4/Asset/a1325.jpg | Max. DCR 1-2 N/A 0.875 Ω | Max. DCR Gate N/A 0.650 Ω | Min. ET Product N/A 840 VµSEC | Max. Leakage N/A 3.5 µH | Min. Inductance N/A 1.50 mH | Overall Turns Ratio N/A 1.5:1:1 |
| GDE25-5 GDE25-5/Asset/a1325.jpg | Max. DCR 1-2 N/A 0.350 Ω | Max. DCR Gate N/A 0.875 Ω | Min. ET Product N/A 540 VµSEC | Max. Leakage N/A 3.5 µH | Min. Inductance N/A 0.680 mH | Overall Turns Ratio N/A 1:1.5 |
| GDE25-6 GDE25-6/Asset/a1325.jpg | Max. DCR 1-2 N/A 0.350 Ω | Max. DCR Gate N/A 01.75 Ω | Min. ET Product N/A 540 VµSEC | Max. Leakage N/A 3.5 µH | Min. Inductance N/A 0.680 mH | Overall Turns Ratio N/A 1:1.5:1.5 |

